Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti–Si–N thin films
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چکیده
منابع مشابه
Spoof-like plasmonic behavior of plasma enhanced atomic layer deposition grown Ag thin films
The plasmonic behavior of Ag thin films produced by plasma enhanced atomic layer deposition (PEALD) has been investigated. We show that as-deposited flat PEALD Ag films exhibit unexpected plasmonic properties, and the plasmonic enhancement can differ markedly, depending on the microstructure of the Ag film. Electromagnetic field simulations indicate that this plasmonic behavior is due to air ga...
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Film growth by the atomic layer deposition (ALD) method relies on alternate pulsing of the precursor gases and vapors into a vacuum chamber and their subsequent chemisorption on the substrate surface (Fig. 1) [1,2]. The different steps in the process are saturative such that ALD film growth is self-limiting yielding one submonolayer of film per deposition cycle. ALD has some unique characterist...
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3 Preface 4 List of publications 5 List of symbols and abbreviations 6
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ژورنال
عنوان ژورنال: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
سال: 2006
ISSN: 1071-1023
DOI: 10.1116/1.2198846